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This CVD SiC coated graphite carrier is designed for MOCVD and epitaxy processes. With 6N purity (99.99995%), 100um typical coating, and FCC beta-phase structure, it ensures high thermal uniformity and corrosion resistance. Ideal for wafer susceptors and trays.
| Parameter | Value |
|---|---|
| Model | CVD-01 |
| Coating Thickness | 100 μm typical (range 50-150 μm) |
| Purity Level | 99.99995% (6N), total ash ≤5 ppm |
| Coating Hardness | 2500 Vickers (40 GPa) |
| Crystal Structure | FCC beta-phase polycrystal, (111) oriented |
| Material | CVD SiC coated graphite |
| Application | Semiconductor epitaxy / RTP process |
Standard model CVD-01. Customization available for size, pocket configuration, and coating thickness within 50-150 μm.
High-purity graphite substrate with dense CVD SiC coating. The FCC beta-phase structure provides excellent adhesion and thermal shock resistance.
Primary applications include MOCVD, epitaxial reactors, and rapid thermal processing (RTP) systems. Used for wafer carriers, susceptors, and trays requiring high temperature stability.
We offer custom sizes, pocket designs, and coating thicknesses to match your reactor. Contact us for specifications.
Asia-Pacific Customer: 500 pcs/month for epitaxy process. Over 2 years continuous high-temperature operation. Achieved stable mass production with consistent epitaxial layer quality, and reduced edge ring replacement frequency by 20%.
Company: Semicera (Ningbo Miami Advanced Material Technology Co., LTD)
Contact: Frank | Email: sales05@semi-cera.com | Tel/WhatsApp: +86 15957878134
Website: www.semi-cera.com
